GlobalFoundries announced on the 17th that it has received $30 million in US government funding to promote the development and production of next-generation gallium nitride on silicon (GaN) at its Vermont factory.
The $30 million funding will enable GlobalFoundries to purchase tools and expand the development and implementation of 200mm GaN wafer fabrication, further strengthening its long-standing global leadership in RF semiconductor technology and give it a leadership position in the manufacture of chips for high-power applications, including electric vehicles, industrial motors and energy applications.
With a manufacturing capacity of over 600,000 wafers per year, GlobalFoundries' Vermont facility is one of the first major semiconductor manufacturing sites in the United States and employs nearly 2,000 people.
All Comments (0)