October 22, 2026 / SemiMedia / — Samsung Electronics is upgrading production lines at its Xi’an plant in China from roughly 200-layer NAND to 286-layer V9 NAND, Reuters reported on October 21, citing people familiar with the plans. The transition targets demand for advanced storage used in AI data centers and other applications.

The upgraded lines are targeting monthly output of 5,000 wafers in December 2026, rising to 40,000 by December 2027, according to a source. The Xi’an facility accounts for approximately 40% of Samsung’s global NAND output.

Samsung confirmed that upgrades are underway in close consultation with Washington and comply with U.S. export regulations. It said the work addresses global customer demand and does not involve additional production capacity or new manufacturing facilities.

Equipment licensing remains a key consideration. Reuters said it could not establish the extent of U.S. approvals for equipment required by the planned upgrades.